| 1. | Series resistance lamp
串联电阻灯 |
| 2. | Series resistance is an important factor confining the response speed of schottky barrier diode
串连电阻是制约肖特基二极管响应速度的一个关键因素。 |
| 3. | Ceramic capacitors at high frequencies , method of test for effective series resistance and capacitance for multilayer
高频多层陶瓷电容器有效串联电阻和电容的试验方法 |
| 4. | To further reduce equivalent series resistance and improve long term reliability , the leads are then soldered with lead free silver solder
为了进一步的减少等效串联阻抗和改善,长期的信赖度,引线是以无铅银焊锡来接焊 |
| 5. | However , ingaas strained - layer single quantum well lasers , optimized for low threshold current and low series resistance , have a highly elliptical beam structure emanating from the laser facet
但是报道的技术中多是针对圆对称光束或近圆对称光束。 |
| 6. | Specific capacitance of edlcs based on activated cnts were obviously improved and the equivalent series resistance decreased , but the effects were influenced by duration of activation process
由活化后的碳纳米管制成的双电层电容器的比电容明显提高，等效串联电阻下降，性能得以改进。 |
| 7. | Because of the limitation of thin silicon film epitaxial technology , it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time , which makes the series resistance large
但长期以来，由于薄硅外延生长技术的限制，无法生长出优质的厚度小于2 m的薄硅外延层，使硅肖特基二极管的串联电阻无法降的更低，限制了其截止频率的提高。 |
| 8. | Improving the electroless plating process based on the work of the past decreases the series resistance from 0 . 5 to 0 . 1 , increases the parallel resistance from 45 to 1119 . 7 , improves the filling factors from 49 . 8 % to 66 . 3 % , therefore the conversion efficiency comes to 8 . 2 %
机械刻槽电池电池结构的设计是依据bp公司的刻槽电池设计的，在以前工作的基础上，进一步改变化学镀工艺条件，是串联电阻由原来的0 so降低到了0 iq ，并联电阻由原来45q增加到了1119 |
| 9. | Because of the great potential of sic mosfets and circuits , in this paper , the characteristics of 6h - sic pmosfets are studied systematically , emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly , the crystal structure of silicon carbide , the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented . the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation
研究了sic的晶体结构，分析了sic中杂质的不完全离化现象以及sic中空穴迁移率的拟和公式；用解一维poisson方程的方法分析了sicpmos空间电荷区的电特性；本论文重点分析了界面态分布和源漏串联电阻对sicpmos器件特性的影响。 |
| 10. | Key technologies and its mechanism for improving crystalline silicon solar cells in the scale manufacture have been researched in this thesis . after sioa surface passivation and forming gas treatment utilization in the scale manufacture , the surface recombination and series resistance of solar cells have been reduced while their open - circuit voltage , fill factor and efficiency improved
本论文研究了提高晶体硅太阳电池效率规模化生产工艺技术的主要环节和相关机理，将sio _ 2表面钝化、 forminggas处理用于规模化生产，降低了太阳电池的表面复合速度和串联电阻，提高了开路电压、填充因子和转换效率。 |
